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DATA SHEET
COMPOUND FIELD EFFECT POWER TRANSISTOR
PA1500B
N-CHANNEL POWER MOS FET ARRAY SWITCHING USE
DESCRIPTION
The PA1500B is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for solenoid, motor and lamp driver.
PACKAGE DIMENSIONS
(in millimeters)
31.5 MAX. 4.2 MAX.
* 4 V driving is possible * Large Current and Low On-state Resistance ID(DC) = 3 A RDS(on)1 0.18 MAX. (VGS = 10 V, ID = 2 A) RDS(on)2 0.24 MAX. (VGS = 4 V, ID = 2 A) * Low Input Capacitance Ciss = 200 pF TYP. * Surge Absorber, built in
1 2 3 4 5 6 7 8 9 10 11 12
2.54 TYP.
0.70.1
1.40.1 0.50.1
10.0 MIN.
10.5 MAX.
2.5 TYP.
FEATURES
1.4 TYP.
ORDERING INFORMATION
Type Number Package 12 Pin SIP
ELECTRODE CONNECTION
1, 5, 8, 12 GATE 2, 4, 9, 11 DRAIN, ANODE 6, 7 3, 10 SOURCE CATHODE
PA1500BH
CONNECTION DIAGRAM ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage VDSS Note 1 60 Gate to Source Voltage VGSS Note 2 20 Drain Current (DC) ID(DC) 3.0 Drain Current (pulse) ID(pulse) Note 3 12 Repetitive peak Reverse Voltage VRRM Note 4 65 Diode Forward Current IF(av) Note 4 3.0 Total Power Dissipation PT1 Note 5 28 Total Power Dissipation PT2 Note 6 4.0 Channel Temperature TCH 150 Storage Temperature Tstg -55 to 150 Single Avalanche Current IAS Note 7 3.0 Single Avalanche Energy EAS Note 7 0.9 Notes 1. VGS = 0 2. VDS = 0 3. PW 10 s, Duty Cycle 1 % 4. Rating of Surge Absorber 5. 4 Circuits, TC = 25 C 6. 4 Circuits, TA = 25 C 7. Starting TCH = 25 C, V DD = 30 V, VGS = 20 RG = 25 , L = 100 H V V A/unit A/unit V A/unit W W C C A mJ
2 D5 3 D6 4
RG 1 6 ZD 9
D1 5
RG ZD 10 11 D8
D2
D7
RG 8 ZD
D3 12
RG ZD
D4
7
V 0,
D1 to D4 D5 to D8 ZD RG
: : : :
Body Diode Surge Absorber Gate to Source Protection Diode Gate Input Resistance 330 TYP.
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Document No. G10597EJ2V0DS00 (2nd edition) Date Published December 1995 P Printed in Japan
(c)
1995
PA1500B
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Drain Leakage Current Gate Leakage Current Gate Cutoff Voltage Forward Transfer Admittance Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage SYMBOL IDSS IGSS VGS(off) | Yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) IF = 3 A, VGS = 0 VGS = 10 V, ID = 3.0 A, VDD = 48 V ID = 2.0 A, VGS = 10 V, VDD * * 30 V, = RL = 15 TEST CONDITIONS VDS = 60 V, VGS = 0 VGS = 20 V, VDS = 0 VDS = 10 V, ID = 1.0 mA VGS = 10 V, ID = 2.0 A VGS = 10 V, ID = 2.0 A VGS = 4.0 V, ID = 2.0 A VDS = 10 V, VGS = 0, f = 1.0 MHz 1.0 2.0 0.10 0.14 200 150 55 20 100 735 350 13 2 4.7 1.0 0.18 0.24 MIN. TYP. MAX. 10 10 2.0 UNIT
A A
V S pF pF pF ns ns ns ns nC nC nC V
SURGE ABSORBER (Diode, builtin) 1 Unit
Repetitive peak Reverse Current Diode Forward Voltage IRRM VF VR = 65 V IF = 3.0 A 10 1.5
A
V
Test Circuit 1
Avalanche Capability
DUT
Test Circuit 2
Switching Time
Rin = 25 PG VGS = 20 V 0 50
L
DUT RL VGS VGS
Wave Form
VDD
PG.
Rin Rin = 10
0 ID
10 % 90 %
VGS (on)
90 %
VDD 90 % ID ID
Wave Form
BVDSS IAS ID VDD VDS
VGS 0 t t = 1 s Duty Cycle 1 % 0
10 % td (on) ton tr td (off) toff
10 % tf
Starting TCH
Test Circuit 3
Gate Charge
DUT IG = 2 mA PG.
RL
50
VDD
2
PA1500B
TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 6
PT - Total Power Dissipation - W
PA1500BH
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 30
PT - Total Power Dissipation - W
NEC
,, ,, ,,
5 4 3 2 1 0
Laed Print Circuit Boad
Under same dissipation in each circuit 4 Circuits operation 3 Circuits operation 2 Circuits operation 1 Circuit operation
Under same dissipation in each circuit 4 Circuits operation 3 Circuits operation 2 Circuits operation 1 Circuit operation
20
10
50
100
150
TC is grease Temperature on back surface 0 50 100 TC - Case Temperature - C
150
TA - Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA 100
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
100 80 60 40 20
ID - Drain Current - A
10
Lim ite V d(
G
1 S=
0V
)
ID(Pulse)
PW = 1
ID(DC)
10 0
m
R
DS
) (on
50 m ms s
10
s
1
m
DC
s
TC = 25 C 0.1 Single Pulse 0.1
1
10
100
0
20
40
60
80
100 120 140 160
VDS - Drain to Source Voltage - V
TC - Case Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 12 10 VGS = 20 V 10 V VGS = 4 V 8 6 4 2 Pulsed
FORWARD TRANSFER CHARACTERISTICS 100 Pulsed
ID - Drain Current - A
1.0
TA = 125C 75 C 25 C -25 C
0.1
0
1
2
3
4
5
6
ID - Drain Current - A
10
0
1
2
3
4
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
3
PA1500B
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 Single Pulse. For each Circuit
Rth(CH-A) 4Circuits 3Circuits 2Circuits 1Circuit
rth(t) - Transient Thermal Resistance - C/W
100
10
Rth(CH-C)
1.0
0.1 100
1m
10 m
100 m
1
10
100
1 000
PW - Pulse Width - sec
| yfs | - Forward Transfer Admittance - S
100
VDS = 10 V Pulsed
RDS(on) - Drain to Source On-State Resistance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 700 600 500 400 300 200 100 0 10 VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 20 ID = 0.6 A 2A 3A Pulsed
10
TA = -25 C 25 C 75 C 125 C
1.0
1 0.1
1.0 ID - Drain Current - A
10
RDS(on) - Drain to Source On-State Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
VGS(off) - Gate to Source Cutoff Voltage - V
300
Pulsed
2.0
VDS = 10 V ID = 1 mA
200
1.5
VGS = 4 V
1.0
VGS = 10 V 100
0.5
0
0.1
1.0 ID - Drain Current - A
10
0 -50
0
50
100
150
TCH - Channel Temperature - C
4
PA1500B
RDS(on) - Drain to Source On-State Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 300
ISD - Diode Forward Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 10
200
VGS = 4 V
1.0 VGS = 10 V 0.1 VGS = 0
100
VGS = 10 V
ID = 2 A 0 -50 0 50 100 150
0.01
0
0.5
1.0
1.5
TCH - Channel Temperature -C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
VSD - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS 1 000
td(on), tr, td(off), tf - Switching Time - ns
1 000 Ciss, Coss, Crss - Capacitance - pF
VGS = 0 f = 1 MHz
td(off) tf tr
Ciss
100
Coss
100 td(on) VDD . . 30 V = VGS = 10 V RG = 10 10 0.1 1.0 10 100
Crss
10 0.1
1
10
100
VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT
1 000 trr - Reverse Recovery time - ns VDS - Drain to Source Voltage - V
ID - Drain Current - A
di/dt = 50 A/ s VGS = 0
100
6 20 4 2 VDS 0 2 4 6 8 10 12 14 0 16
10 0.1
1.0
10
100
ID - Drain Current - A
Qg - Gate Charge - nC
VGS - Gate to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 12 60 ID = 3 A VGS 10 VDD = 12 V 30 V 48 V 8 40
5
PA1500B
SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD 10
IAS - Single Avalanche Energy - mJ Energy Derating Factor - %
SINGLE AVALANCHE ENERGY DERATING FACTOR 100
IAS = 3 A
EA
80
VDD = 30 V RG = 25 VGS = 20 V 0 IAS 3.0 A
S
1.0
=0
60
.9
mJ
40
VDD = 30 V VGS = 20 V 0 RG = 25 Starting TCH = 25 C 0.1 10 100 1m 10 m
20 0 25
50
75
100
125
150
L - Inductive Load - H
Starting TCH - Starting Channel Temperature - C
REFERENCE
Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Semiconductor device package manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Power MOS FET features and application switching power supply Application circuits using Power MOS FET Safe operating area of Power MOS FET Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 TEA-1034 TEA-1035 TEA-1037
6
PA1500B
[MEMO]
7
PA1500B
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product.
M4 94.11
2

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